Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

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Atomic force microscope (AFM), transmission electron microscopy (TEM), and photoluminescence measurements were carried out to investigate the dependence of the InAs quantum dot size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots (QDs) grown on (0 0 1) GaAs substrates. AFM and TEM images showed that the size of the QDs increased with increase in the stacked layer number up to the deposition time of 20 s. However, the size distribution uniformity of the QDs was improved with increase in the stacked layer number when the deposition time and the stacking layer of the InAs QDs gradually decreased. These results can help in an improved understanding of the control of sizes of QDs in InAs/GaAs QD arrays. (C) 2002 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2002-05
Language
English
Article Type
Article
Keywords

MODULATION-DOPED HETEROSTRUCTURES; STRAINED EPITAXY; GAAS; GROWTH; TRANSITION; ISLANDS; LASERS

Citation

JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68

ISSN
0022-0248
URI
http://hdl.handle.net/10203/82527
Appears in Collection
MS-Journal Papers(저널논문)NT-Journal Papers(저널논문)
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