GaN nanorods doped by hydride vapor-phase epitaxy: Optical and electrical properties

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Exciting opportunities in nanoscale technology could be made available thanks to this first report of doping GaN nanorods to create p- and n-type materials. Controlled doping of the nanorods is achieved by hydride vapor-phase epitaxy, and they are characterized optically and electrically. The Figure shows a scanning electron microscopy image of a nanorod field-effect transistor (scale bar is 10 mum).
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2003-02
Language
English
Article Type
Article
Keywords

CARBON NANOTUBES; SILICON NANOWIRES; CONTROLLED GROWTH; CHEMISTRY; PHYSICS

Citation

ADVANCED MATERIALS, v.15, no.3, pp.232 - 232

ISSN
0935-9648
DOI
10.1002/adma.200390053
URI
http://hdl.handle.net/10203/82019
Appears in Collection
PH-Journal Papers(저널논문)
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