GaN nanorods doped by hydride vapor-phase epitaxy: Optical and electrical properties

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dc.contributor.authorKim, HMko
dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorKang, TWko
dc.date.accessioned2013-03-04T07:34:57Z-
dc.date.available2013-03-04T07:34:57Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-02-
dc.identifier.citationADVANCED MATERIALS, v.15, no.3, pp.232 - 232-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10203/82019-
dc.description.abstractExciting opportunities in nanoscale technology could be made available thanks to this first report of doping GaN nanorods to create p- and n-type materials. Controlled doping of the nanorods is achieved by hydride vapor-phase epitaxy, and they are characterized optically and electrically. The Figure shows a scanning electron microscopy image of a nanorod field-effect transistor (scale bar is 10 mum).-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectCARBON NANOTUBES-
dc.subjectSILICON NANOWIRES-
dc.subjectCONTROLLED GROWTH-
dc.subjectCHEMISTRY-
dc.subjectPHYSICS-
dc.titleGaN nanorods doped by hydride vapor-phase epitaxy: Optical and electrical properties-
dc.typeArticle-
dc.identifier.wosid000181139200011-
dc.identifier.scopusid2-s2.0-0037419682-
dc.type.rimsART-
dc.citation.volume15-
dc.citation.issue3-
dc.citation.beginningpage232-
dc.citation.endingpage232-
dc.citation.publicationnameADVANCED MATERIALS-
dc.identifier.doi10.1002/adma.200390053-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorKim, HM-
dc.contributor.nonIdAuthorKang, TW-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCARBON NANOTUBES-
dc.subject.keywordPlusSILICON NANOWIRES-
dc.subject.keywordPlusCONTROLLED GROWTH-
dc.subject.keywordPlusCHEMISTRY-
dc.subject.keywordPlusPHYSICS-
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