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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Dielectric properties of SrTiO3, and BST thin films fabricated using ECR-PEMOCVD

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dc.contributor.authorLee, JSko
dc.contributor.authorKim, KSko
dc.contributor.authorKim, Eko
dc.contributor.authorNo, Kwangsooko
dc.date.accessioned2013-03-02T22:06:06Z-
dc.date.available2013-03-02T22:06:06Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-
dc.identifier.citationINTEGRATED FERROELECTRICS, v.21, no.1-4, pp.343 - 353-
dc.identifier.issn1058-4587-
dc.identifier.urihttp://hdl.handle.net/10203/75778-
dc.description.abstractThe SrTiO3 Thin films were deposited on Pt/SiO2/Si by ECR-PEMOCVD and their dielectric properties were investigated as a function of composition. The chemical bonding states of elements consisting these films were investigated using X-ray photoelectron spectroscopy (XPS) and Discrete Variational (DV)X alpha simulation. The asymmetry of composition dependence on dielectric properties was explained by the XPS data. Further, effectiveness of NH3 carrier gas over Ar to deposit SrTiO3 is discussed in detail. Based on these data, the thickness dependence of dielectric constant of BST films was explained.-
dc.languageEnglish-
dc.publisherGORDON BREACH SCI PUBL LTD-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectACCESS MEMORY APPLICATION-
dc.subjectMOCVD-
dc.subject(BA,SR)TIO3-
dc.subjectPLASMA-
dc.titleDielectric properties of SrTiO3, and BST thin films fabricated using ECR-PEMOCVD-
dc.typeArticle-
dc.identifier.wosid000076544100031-
dc.identifier.scopusid2-s2.0-0032308578-
dc.type.rimsART-
dc.citation.volume21-
dc.citation.issue1-4-
dc.citation.beginningpage343-
dc.citation.endingpage353-
dc.citation.publicationnameINTEGRATED FERROELECTRICS-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorLee, JS-
dc.contributor.nonIdAuthorKim, KS-
dc.contributor.nonIdAuthorKim, E-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorSrTiO3-
dc.subject.keywordAuthorBST-
dc.subject.keywordAuthordielectric properties-
dc.subject.keywordAuthorchemical bonding states-
dc.subject.keywordAuthorXPS-
dc.subject.keywordAuthorDVX alpha-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusACCESS MEMORY APPLICATION-
dc.subject.keywordPlusMOCVD-
dc.subject.keywordPlus(BA,SR)TIO3-
dc.subject.keywordPlusPLASMA-
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