ELECTRICAL-PROPERTIES AND CRYSTAL-STRUCTURE OF (BA0.5SR0.5)TIO3 THIN-FILMS PREPARED ON PT/SIO2/SI BY RF MAGNETRON SPUTTERING

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(Ba0.5Sr0.(5))TiO3 (BST) thin films have been prepared on Pt/SiO2/Si substrates under various Ar/O-2 plasma conditions by the conventional rf magnetron sputtering method using a ceramic target containing excess BaO and SrO. With increasing deposition temperature, the crystallinity of the BST films abruptly increased and change of the preferred orientation was observed. At 650 degrees C, (100)-preferred orientation was obtained. The increase of the crystallinity of films improved the dielectric constant. A 100 nm BST thin film deposited at 650 degrees C with 50% O-2 plasma content has a dielectric constant of 725 and a leakage,current density of 2.3 x 10(-7) A/cm(2) at 2.5 V. In the current-voltage curve of BST film deposited at higher substrate temperature, lower leakage current density in the low bias region and narrower flat region (hopping conduction region) were obtained.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1995-01
Language
English
Article Type
Article
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.1, pp.196 - 199

ISSN
0021-4922
DOI
10.1143/JJAP.34.196
URI
http://hdl.handle.net/10203/74356
Appears in Collection
MS-Journal Papers(저널논문)
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