DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHOI, CK | ko |
dc.contributor.author | PARK, HH | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | CHO, KI | ko |
dc.contributor.author | PAEK, MC | ko |
dc.contributor.author | KWON, OJ | ko |
dc.contributor.author | KIM, KH | ko |
dc.contributor.author | YANG, SJ | ko |
dc.date.accessioned | 2013-02-27T08:26:19Z | - |
dc.date.available | 2013-02-27T08:26:19Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-12 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.115, no.1-4, pp.579 - 588 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67482 | - |
dc.description.abstract | Titanium-disilicide was formed by deposition of high purity titanium (99.99%) on a silicon (111) wafer in ultra-high vacuum and in-situ annealing. The deposition was monitered using reflection high energy electron diffraction as a function of deposited titanium thickness. The epitaxial growth of TiSi2 on Si (111) by deposition of 200 monolayer thick titanium on the clean surface of silicon and annealing at 750-degrees-C for 1 h was identified using a transmission electron microscope. Almost the whole area of the silicide layer was revealed as epitaxial TiSi2 with C54 structure. Cross-sectional high resolution images of the sample showed that the TiSi2/Si interface is incoherent. Three kinds of orientation relationships were identified as (111BAR)TiSi2 parallel-to (220BAR)Si, [123BAR]TiSi2 parallel-to [112BAR]Si, (311BAR)TiSi2 parallel-to (002)Si, [136BAR] TiSi2 parallel-to [110BAR]Si and (022)TiSi2 parallel-to (200)Si, [233BAR]TiSi2 parallel-to [011BAR]Si with misorientations of 6-degrees, 2-degrees and 14.74-degrees, respectively. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | TISI2 | - |
dc.subject | (111)SI | - |
dc.title | FORMATION AND EPITAXIAL-GROWTH OF TITANIUM-DISILICIDE ON SI (111) | - |
dc.type | Article | - |
dc.identifier.wosid | A1991HF18700105 | - |
dc.identifier.scopusid | 2-s2.0-0026414742 | - |
dc.type.rims | ART | - |
dc.citation.volume | 115 | - |
dc.citation.issue | 1-4 | - |
dc.citation.beginningpage | 579 | - |
dc.citation.endingpage | 588 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | CHOI, CK | - |
dc.contributor.nonIdAuthor | PARK, HH | - |
dc.contributor.nonIdAuthor | CHO, KI | - |
dc.contributor.nonIdAuthor | PAEK, MC | - |
dc.contributor.nonIdAuthor | KWON, OJ | - |
dc.contributor.nonIdAuthor | KIM, KH | - |
dc.contributor.nonIdAuthor | YANG, SJ | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | TISI2 | - |
dc.subject.keywordPlus | (111)SI | - |
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