DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHOI, CK | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | LEE, YP | ko |
dc.contributor.author | PARK, HH | ko |
dc.contributor.author | JUNG, SM | ko |
dc.contributor.author | KIM, KH | ko |
dc.date.accessioned | 2013-02-25T07:49:33Z | - |
dc.date.available | 2013-02-25T07:49:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1993-08 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.26, no.4, pp.407 - 412 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/60620 | - |
dc.description.abstract | The growth mode of a Ti film on a Si(111)-7 X 7 reconstructed surface and the solid-phase heteroepitaxial growth of Si/C54 TiSi2/Si(111) were investigated by X-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. The growth mode of the Ti film is the Stransky-Krastanov type when the substrate temperature is room temperature. The orientation relationships between the epitaxial C54 TiSi2 and the Si(111) substrate are TiSi2[141BAR] parallel-to Si[011BAR] and TiSi2(202) parallel-to Si(111), and the matching face relationships for the epi-Si/epi-C54 TiSi2/Si(111) structure are Si(111) parallel-to C54 TiSi2(202BAR) parallel-to Si(111) without a misorientation angle. The microstructures of the interface show that the interface is abrupt and semicoherent. The best result for the growth of the epi-Si/epi-C54 TiSi2/Si(111) structure was obtained by depositing Si film on the C54 TiSi2 at 600-degrees-C followed by in situ annealing at 800-degrees-C for 10 min in UHV. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | SILICIDE FORMATION | - |
dc.subject | SUBSTRATE | - |
dc.subject | INTERFACE | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | (111)SI | - |
dc.subject | C54 | - |
dc.title | GROWTH MODE OF TI-THIN FILMS ON SI(111) AND DOUBLE HETEROEPITAXIAL GROWTH OF EPI-SI EPI-C54 TISI2 SI(111) | - |
dc.type | Article | - |
dc.identifier.wosid | A1993LR89300018 | - |
dc.type.rims | ART | - |
dc.citation.volume | 26 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 407 | - |
dc.citation.endingpage | 412 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | CHOI, CK | - |
dc.contributor.nonIdAuthor | LEE, YP | - |
dc.contributor.nonIdAuthor | PARK, HH | - |
dc.contributor.nonIdAuthor | JUNG, SM | - |
dc.contributor.nonIdAuthor | KIM, KH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | SILICIDE FORMATION | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | (111)SI | - |
dc.subject.keywordPlus | C54 | - |
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