DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jong Kyung | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Lee, Seok-Hee | ko |
dc.contributor.author | Lee, Ki-Hong | ko |
dc.contributor.author | Pyi, Seung Ho | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-02-25T08:26:16Z | - |
dc.date.available | 2013-02-25T08:26:16Z | - |
dc.date.created | 2012-12-03 | - |
dc.date.created | 2012-12-03 | - |
dc.date.created | 2012-12-03 | - |
dc.date.issued | 2012-12-10 | - |
dc.identifier.citation | IEEE International Electron Devices Meeting | - |
dc.identifier.uri | http://hdl.handle.net/10203/60471 | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.title | Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap Flash memory cell operations | - |
dc.type | Conference | - |
dc.identifier.wosid | 000320615600007 | - |
dc.identifier.scopusid | 2-s2.0-84876131194 | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | IEEE International Electron Devices Meeting | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | San Francisco, USA | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.localauthor | Lee, Seok-Hee | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Park, Jong Kyung | - |
dc.contributor.nonIdAuthor | Moon, Dong-Il | - |
dc.contributor.nonIdAuthor | Lee, Ki-Hong | - |
dc.contributor.nonIdAuthor | Pyi, Seung Ho | - |
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