Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap Flash memory cell operations

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dc.contributor.authorPark, Jong Kyungko
dc.contributor.authorMoon, Dong-Ilko
dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorLee, Seok-Heeko
dc.contributor.authorLee, Ki-Hongko
dc.contributor.authorPyi, Seung Hoko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2013-02-25T08:26:16Z-
dc.date.available2013-02-25T08:26:16Z-
dc.date.created2012-12-03-
dc.date.created2012-12-03-
dc.date.created2012-12-03-
dc.date.issued2012-12-10-
dc.identifier.citationIEEE International Electron Devices Meeting-
dc.identifier.urihttp://hdl.handle.net/10203/60471-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleOrigin of transient Vth shift after erase and its impact on 2D/3D structure charge trap Flash memory cell operations-
dc.typeConference-
dc.identifier.wosid000320615600007-
dc.identifier.scopusid2-s2.0-84876131194-
dc.type.rimsCONF-
dc.citation.publicationnameIEEE International Electron Devices Meeting-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco, USA-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.localauthorLee, Seok-Hee-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorPark, Jong Kyung-
dc.contributor.nonIdAuthorMoon, Dong-Il-
dc.contributor.nonIdAuthorLee, Ki-Hong-
dc.contributor.nonIdAuthorPyi, Seung Ho-
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