SALE: Smartly Allocating Low-Cost Many-Bit ECC for Mitigating Read and Write Errors in STT-RAM Caches

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Spin-transfer torque RAM (STT-RAM) is a future technology for ON-chip caches. However, it suffers from high read and write error rates. Concurrently dealing with these errors is quite challenging and incurs large performance overhead. This article proposes a smartly allocating low-cost many-bit ECC (SALE) scheme, which makes use of the low-cost many-bit error correction coding (ECC) to overcome this performance overhead. The low-cost many-bit ECC can fix many errors with low logic complexity and latency overheads. However, it requires a large number of parity bits. Therefore, SALE smartly uses low-cost many-bit ECC for only a certain type of cache lines and manages the corresponding large number of parity bits in the data array. SALE also introduces an ECC-free partition to reduce the ECC storage requirement for the STT-RAM caches. The cache lines belonging to an ECC-free partition do not have dedicated storage space for the ECC parity bits, thereby reducing the ECC storage requirement for the STT-RAM caches. Our experimental results demonstrate that SALE achieves performance close to that of an error-free cache by improving performance by 13% (16%) over the baseline scheme in single-core (quad-core) systems while requiring 50% less storage space for the ECC parity bits.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-06
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.28, no.6, pp.1357 - 1370

ISSN
1063-8210
DOI
10.1109/TVLSI.2020.2977131
URI
http://hdl.handle.net/10203/275582
Appears in Collection
CS-Journal Papers(저널논문)
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