Excitation of Er3+ ions in SiO2 with Si nanocrystals

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Probabilities of excitation of erbium ions via Coulomb interaction with carriers localized in silicon nanocrystals embedded in SiO2, in recombination and intraband relaxation of these carriers, have been calculated.
Publisher
PLEIADES PUBLISHING INC
Issue Date
2008-08
Language
English
Article Type
Article
Citation

SEMICONDUCTORS, v.42, no.8, pp.971 - 979

ISSN
1063-7826
DOI
10.1134/S1063782608080162
URI
http://hdl.handle.net/10203/261908
Appears in Collection
PH-Journal Papers(저널논문)
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