Excitation of Er3+ ions in SiO2 with Si nanocrystals
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Prokofiev, A. A. | ko |
| dc.contributor.author | Andrey, S. Moskalenko | ko |
| dc.contributor.author | Yassievich, I. N. | ko |
| dc.date.accessioned | 2019-05-15T13:27:23Z | - |
| dc.date.available | 2019-05-15T13:27:23Z | - |
| dc.date.created | 2019-05-13 | - |
| dc.date.issued | 2008-08 | - |
| dc.identifier.citation | SEMICONDUCTORS, v.42, no.8, pp.971 - 979 | - |
| dc.identifier.issn | 1063-7826 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/261908 | - |
| dc.description.abstract | Probabilities of excitation of erbium ions via Coulomb interaction with carriers localized in silicon nanocrystals embedded in SiO2, in recombination and intraband relaxation of these carriers, have been calculated. | - |
| dc.language | English | - |
| dc.publisher | PLEIADES PUBLISHING INC | - |
| dc.title | Excitation of Er3+ ions in SiO2 with Si nanocrystals | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000258701600015 | - |
| dc.identifier.scopusid | 2-s2.0-49649117993 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 42 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 971 | - |
| dc.citation.endingpage | 979 | - |
| dc.citation.publicationname | SEMICONDUCTORS | - |
| dc.identifier.doi | 10.1134/S1063782608080162 | - |
| dc.contributor.localauthor | Andrey, S. Moskalenko | - |
| dc.contributor.nonIdAuthor | Prokofiev, A. A. | - |
| dc.contributor.nonIdAuthor | Yassievich, I. N. | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
| dc.subject.keywordPlus | LUMINESCENCE | - |
| dc.subject.keywordPlus | MECHANISMS | - |
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