A 230-260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax-core
A dual-peak maximum achievable gain core design technique is proposed. It has been adopted into a 4-stage wideband amplifier. Implemented in a 65nm CMOS, the amplifier achieves 3dB bandwidth of 30GHz (230 similar to 260GHz), gain of 12.4 +/- 1.5dB, and peak PAE of 1.6% while dissipating 23.8mW, which corresponds to the widest bandwidth and highest gain per stage among other reported CMOS amplifiers operating above 200GHz.
- Publisher
- IEEE
- Issue Date
- 2018-01
- Language
- English
- Citation
23rd Asia and South Pacific Design Automation Conference (ASP-DAC), pp.301 - 302
- ISSN
- 2153-671X
- Appears in Collection
- EE-Conference Papers(학술회의논문)
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