Effect of Se Flux and Se Treatment on the Photovoltaic Performance of β–CIGS Solar Cells

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Cu(In,Ga)3Se5 (β-CIGS) has a band gap of 1.35 eV which is an optimum value for high solar-energy conversion efficiency. However, β-CIGS film was not well characterized yet due to lower efficiency compared to Cu(In,Ga)Se2 (α-CIGS). In this work, β-CIGS films were fabricated by a three-stage co-evaporation of elemental sources with various Se fluxes. As the Se flux increased, the crystallinity of β-CIGS phase was improved from the analysis of Raman spectroscopy and a deep-level defect was reduced from the analysis of photoluminescence spectroscopy. A Se treatment of the β-CIGS film at 200°C increased Ga content and decreased Cu content at the surface of the film. With the Se treatment at 200°C, the cell efficiency was greatly improved for the CIGS films prepared with low Se flux due to the increase of short-circuit current and fill factor. It was found that the main reason of performance mprovement was lower Cu content at the surface instead of higher Ga content.
Publisher
Korea Photovoltaic Society
Issue Date
2015-06
Language
English
Citation

Current Photovoltaic Research, v.3, no.2, pp.39 - 44

ISSN
2288-3274
URI
http://hdl.handle.net/10203/239967
Appears in Collection
MS-Journal Papers(저널논문)
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