Cu(In,Ga)Se2 박막의 KF 처리가 CIGS태양전지에 미치는 영향 Effect of KF Treatment of Cu(In,Ga)Se2 Thin Films on the Photovoltaic Properties of CIGS Solar Cells

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We applied KF on CIGS film to modify CIGS surface with a wider-bandgap surface layer. With the KF deposition the surface of CIGS film had fine particle on the CIGS surface at 350 and 300°C. No fine particle was detected at 500 and 250°C. With the KF treatment, the Ga and O content increased at the surface, while the In and Cu content decreased. The valence band maximum was lowered with KF treatment. The composition profile and band structure were positive side of applying KF on the CIGS surface. However, the efficiency decreased with the KF treatment due to high series resistance, probably due to too thick surface layer. A smaller amount of KF should be supplied and more systematic analysis is necessary to obtain a reproducible higher efficiency CIGS solar cells.
Publisher
Korea Photovoltaic Society
Issue Date
2015-06
Language
Korean
Citation

Current Photovoltaic Research, v.3, no.2, pp.65 - 70

ISSN
2288-3274
URI
http://hdl.handle.net/10203/239966
Appears in Collection
MS-Journal Papers(저널논문)
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