Atomic-Scale Spectroscopy of Gated Monolayer MoS2

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dc.contributor.authorZhou, Xiaodongko
dc.contributor.authorKang, Kibumko
dc.contributor.authorXie, Saienko
dc.contributor.authorDadgar, Aliko
dc.contributor.authorMonahan, Nicholas R.ko
dc.contributor.authorZhu, X. -Y.ko
dc.contributor.authorPark, Jiwoongko
dc.contributor.authorPasupathy, Abhay N.ko
dc.date.accessioned2018-01-30T04:22:51Z-
dc.date.available2018-01-30T04:22:51Z-
dc.date.created2018-01-09-
dc.date.created2018-01-09-
dc.date.issued2016-05-
dc.identifier.citationNANO LETTERS, v.16, no.5, pp.3148 - 3154-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/238855-
dc.description.abstractThe electronic properties of semiconducting monolayer transition-metal dichalcogenides can be tuned by electrostatic gate potentials. Here we report gate-tunable imaging and spectroscopy of monolayer MoS2 by atomic-resolution scanning tunneling microscopy/spectroscopy (STM/STS). Our measurements are performed on large-area samples grown by metal organic chemical vapor deposition (MOCVD) techniques on a silicon oxide substrate. Topographic measurements of defect density indicate a sample quality comparable to single-crystal MoS2. From gate voltage dependent spectroscopic measurements, we determine that in-gap states exist in or near the MoS2 film at a density of 1.3 x 10(12) eV(-1) cm(-2). By combining the single-particle band gap measured by STS with optical measurements, we estimate an exciton binding energy of 230 meV on this substrate, in qualitative agreement with numerical simulation. Grain boundaries are observed in these polycrystalline samples, which are seen to not have strong electronic signatures in STM imaging.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectTRANSITION-METAL DICHALCOGENIDES-
dc.subjectSCANNING TUNNELING SPECTROSCOPY-
dc.subjectHEXAGONAL BORON-NITRIDE-
dc.subjectSINGLE-LAYER MOS2-
dc.subjectMOLYBDENUM-DISULFIDE-
dc.subjectVALLEY POLARIZATION-
dc.subjectELECTRICAL CONTROL-
dc.subjectGRAIN-BOUNDARIES-
dc.subjectEDGE STATES-
dc.subjectGRAPHENE-
dc.titleAtomic-Scale Spectroscopy of Gated Monolayer MoS2-
dc.typeArticle-
dc.identifier.wosid000375889700038-
dc.identifier.scopusid2-s2.0-84974784624-
dc.type.rimsART-
dc.citation.volume16-
dc.citation.issue5-
dc.citation.beginningpage3148-
dc.citation.endingpage3154-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/acs.nanolett.6b00473-
dc.contributor.localauthorKang, Kibum-
dc.contributor.nonIdAuthorZhou, Xiaodong-
dc.contributor.nonIdAuthorXie, Saien-
dc.contributor.nonIdAuthorDadgar, Ali-
dc.contributor.nonIdAuthorMonahan, Nicholas R.-
dc.contributor.nonIdAuthorZhu, X. -Y.-
dc.contributor.nonIdAuthorPark, Jiwoong-
dc.contributor.nonIdAuthorPasupathy, Abhay N.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorMonolayer molybdenum disulfide-
dc.subject.keywordAuthorscanning tunneling microscopy/spectroscopy-
dc.subject.keywordAuthorsingle-particle band gap-
dc.subject.keywordAuthorexciton binding energy-
dc.subject.keywordAuthorgrain boundary-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusSCANNING TUNNELING SPECTROSCOPY-
dc.subject.keywordPlusHEXAGONAL BORON-NITRIDE-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusMOLYBDENUM-DISULFIDE-
dc.subject.keywordPlusVALLEY POLARIZATION-
dc.subject.keywordPlusELECTRICAL CONTROL-
dc.subject.keywordPlusGRAIN-BOUNDARIES-
dc.subject.keywordPlusEDGE STATES-
dc.subject.keywordPlusGRAPHENE-
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