Bendable and Transparent Barium Titanate Capacitors on Plastic Substrates for High Performance Flexible Ferroelectric Devices

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This article describes a fabrication procedure of high performance flexible ferroelectric materials supported on plastic substrates and the characterization of BaTiO(3) thin films on flexible substrates. Ferroelectric BaTiO(3) thin film was deposited using radio-frequency magnetron sputtering on a Pt/Ti/SiO(2)/(100) Si substrate and annealed at 700 degrees C for crystallization. The metal-insulator (BaTiO(3))-metal structure was successfully transferred onto flexible substrates by the standard microfabrication and soft lithographic printing methods after removing the underlying sacrificial TiO(2) layer by buffered oxide etchant etching. The dielectric constant of the BaTiO(3) thin films on the flexible substrate was comparable with that on a bulk Si substrate. No significant change in dielectric constant was observed upon bending with various radii and debending. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3407622] All rights reserved.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2010-04
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LARGE-AREA; PRINTABLE FORM; BATIO3 FILMS; SILICON; DEPOSITION; RIBBONS

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.7, pp.57 - 59

ISSN
1099-0062
DOI
10.1149/1.3407622
URI
http://hdl.handle.net/10203/23312
Appears in Collection
MS-Journal Papers(저널논문)
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