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Showing results 1 to 3 of 3

1
Body thickness dependence of impact ionization in a multiple-gate FinFET

Han, Jin-Woo; Lee, Jiye; Park, Donggun; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.28, no.7, pp.625 - 627, 2007-07

2
Fabrication of 50 nm trigate silicon on insulator metal-oxide-silicon field-effect transistor without source/drain activation annealing

Im, Kiju; Cho, Won-Ju; Ahn, Chang-Geun; Yang, Jong-Heon; Oh, Jihun; Lee, Seongjae; Hwang, Hyunsang, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.43, no.5A, pp.2438 - 2441, 2004-05

3
Quasi-3-D velocity saturation model for multiple-gate MOSFETs

Han, Jin-Woo; Lee, Choong-Ho; Park, Donggun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.5, pp.1165 - 1170, 2007-05

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