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Characteristics of MOSFET with non-overlapped source-drain to gate Lee, H; Chang, SI; Lee, J; Shin, Hyung-Cheol, IEICE TRANSACTIONS ON ELECTRONICS, v.E85C, no.5, pp.1079 - 1085, 2002-05 |
Gate Delay Characteristics of a Sub-30nm MOS Device with Non-Overlapped Source-Drain to Gate Fegion hyunjin lee; sung-il chang; hyungcheol shin; joungho lee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.937 - 941, 2002-12 |
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