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Showing results 1 to 6 of 6

1
Effects of in-situ RF sputter and conventional HF cleaning on TiSi2 formation

Bae, JU; Lee, JeongYong; Hyeon, YC; Yu, HK; Nam, KS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, pp.117 - 120, 1998-11

2
Formation and properties of epitaxial CoSi2 layers on p-Si0.83Ge0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition

Ban, SH; Shin, DO; Ahn, YS; Ahn, Byung Tae; Shim, KH; Lee, NE, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, pp.3350 - 3353, 2003-06

3
Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt-carbon films on (100) Si substrate

Rhee, HS; Ahn, Byung Tae; Sohn, DK, JOURNAL OF APPLIED PHYSICS, v.86, no.6, pp.3452 - 3459, 1999-09

4
Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition on Si tips and its field-emission properties

Han, BW; Rhee, HS; Ahn, Byung Tae, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.19, no.2, pp.533 - 536, 2001

5
One-dimensional chain structure produced by Ce on vicinal Si(100)

Lee, H; Lee, D; Lim, DK; Kim, Sehun; Hwang, C, SURFACE SCIENCE, v.600, no.6, pp.1283 - 1289, 2006-03

6
Structural phase transition at a finite thickness of cerium overlayers on Si(111)

Lee, Hangil; Lee, D; Kim, Sehun; Hwang, C, NEW JOURNAL OF PHYSICS, v.10, 2008-04

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