One-dimensional chain structure produced by Ce on vicinal Si(100)
One-dimensional Ce nanowires have been grown on a single-domain vicinal Si(100) surface. The growth mode, including the structural and electronic properties as a function of the substrate temperature and Cc coverage, was studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The results show the formation of Cc nanowires along the step edges on the vicinal Si(100) substrate at 580 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE BV
- Issue Date
- 2006-03
- Language
- English
- Article Type
- Article
- Keywords
SCANNING-TUNNELING MICROSCOPY; DISILICIDE NANOWIRES; SI(001) SURFACES; STEPS; SI(111); GROWTH; NANOSTRUCTURES; INTERFACE; SILICIDE; STATE
- Citation
SURFACE SCIENCE, v.600, no.6, pp.1283 - 1289
- ISSN
- 0039-6028
- Appears in Collection
- CH-Journal Papers(저널논문)
- Files in This Item
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