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Jeon, Sanghun (전상훈)
교수, (전기및전자공학부)

https://antonis.kaist.ac.kr/

Research Area
Semiconductor Process, Semiconductor Materials, Semiconductor Sensor
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Monolithic three-dimensional hafnia-based artificial nerve system

    Jung, Minhyun; Kim, Seungyeob; Hwang, Junghyeon; et al, NANO ENERGY, v.126, 2024-07

    2
    Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition

    Yang, Ketong; Jung, Minhyun; Jung, Taeseung; et al, ACS APPLIED ELECTRONIC MATERIALS, v.6, no.7, pp.5067 - 5076, 2024-06

    3
    Ultrafast (50 ns) ID-VGAnalysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator

    Jung, Taeseung; Nam, Sooji; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.5, pp.3009 - 3014, 2024-05

    4
    Novel strategies for low-voltage NAND flash memory with negative capacitance effect

    Kim, Giuk; Kim, Taeho; Lee, Sangho; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.63, no.5, 2024-05

    5
    Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions

    Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, SMALL, v.20, no.9, 2024-03

    6
    Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET

    Lee, Sangho; Kim, Giuk; Lee, Youngkyu; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.3, pp.1865 - 1871, 2024-03

    7
    Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia

    Yun, Seokjung; Kim, Hoon; Seo, Myungsoo; et al, ACS APPLIED ELECTRONIC MATERIALS, v.6, no.4, pp.2134 - 2141, 2024-03

    8
    Flexible Artificial Mechanoreceptor Based on Microwave Annealed Morphotropic Phase Boundary of HfxZr1-xO2 Thin Film

    Jung, Minhyun; Kim, Seungyeob; Hwang, Junghyeon; et al, ADVANCED ELECTRONIC MATERIALS, v.10, no.2, 2024-02

    9
    Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network

    Hwang, Junghyeon; Joh, Hongrae; Kim, Chaeheon; et al, ACS APPLIED MATERIALS & INTERFACES, v.16, no.2, pp.2467 - 2476, 2024-01

    10
    Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/ graphene heterostructure with rebound depolarization

    Jang, Seonghoon; Kim, Yongjun; Jeon, Jihoon; et al, JOURNAL OF ALLOYS AND COMPOUNDS, v.965, 2023-11

    11
    Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

    Joh, Hongrae; Nam, Sooji; Jung, Minhyun; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.44, pp.51339 - 51349, 2023-10

    12
    High Pressure Microwave Annealing Effect on Electrical Properties of Hf (x) Zr1-x O Films near Morphotropic Phase Boundary

    Jung, Minhyun; Kim, Chaeheon; Hwang, Junghyeon; et al, ACS APPLIED ELECTRONIC MATERIALS, v.5, no.9, pp.4826 - 4835, 2023-08

    13
    Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory

    Yi, Boram; Hwang, Junghyeon; Oh, Tae Woo; et al, SOLID-STATE ELECTRONICS, v.206, 2023-08

    14
    Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices

    Lim, Sehee; Goh, Youngin; Lee, Young Kyu; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.7, pp.1860 - 1870, 2023-07

    15
    Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150 degrees C) microwave annealing for flexible electronics

    Jung, Taeseung; Han, Jung Hoon; Nam, Sooji; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.41, no.3, 2023-05

    16
    The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications

    Kim, Taeho; Kim, Giuk; Lee, Young Kyu; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02

    17
    Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors

    Lee, Sangho; Lee, Youngkyu; Kim, Giuk; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.349 - 353, 2023-01

    18
    Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices

    Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01

    19
    Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors

    Kim, Giuk; Ko, Dong Han; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.1, pp.1463 - 1474, 2023-01

    20
    A method of controlling the imprint effect in hafnia ferroelectric device

    Shin, Hunbeom; Gaddam, Venkateswarlu; Goh, Youngin; et al, APPLIED PHYSICS LETTERS, v.122, no.2, 2023-01
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