Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes

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We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.
Publisher
AMER CHEMICAL SOC
Issue Date
2012-03
Language
English
Article Type
Article
Keywords

BLOCK-COPOLYMER LITHOGRAPHY; SEQUENTIAL INFILTRATION SYNTHESIS; RESISTIVE SWITCHES; PATTERNED MEDIA; MEMORY; ARRAYS; POLYDIMETHYLSILOXANE; GRAPHOEPITAXY; TEMPLATES; NANOLITHOGRAPHY

Citation

NANO LETTERS, v.12, no.3, pp.1235 - 1240

ISSN
1530-6984
DOI
10.1021/nl203597d
URI
http://hdl.handle.net/10203/97671
Appears in Collection
MS-Journal Papers(저널논문)
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