Field Emission of ITO-Coated Vertically Aligned Nanowire Array

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An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-mu m-thick ITO. The turn-on electric field intensity is about 2.0 V/mu m, and the field enhancement factor, beta, is approximately 3,078 when the gap for field emission is 0.6 mu m, as measured with a nanomanipulator in a scanning electron microscope.
Publisher
SPRINGER
Issue Date
2010-07
Language
English
Article Type
Article
Keywords

INDIUM TIN OXIDE; ELECTRON-EMISSION; DEVICES; FILMS

Citation

NANOSCALE RESEARCH LETTERS, v.5, no.7, pp.1128 - 1131

ISSN
1931-7573
DOI
10.1007/s11671-010-9613-2
URI
http://hdl.handle.net/10203/97065
Appears in Collection
ME-Journal Papers(저널논문)
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