Field Emission of ITO-Coated Vertically Aligned Nanowire Array

Abstract

An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-mu m-thick ITO. The turn-on electric field intensity is about 2.0 V/mu m, and the field enhancement factor, beta, is approximately 3,078 when the gap for field emission is 0.6 mu m, as measured with a nanomanipulator in a scanning electron microscope.