DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Jang, Moon-Gyu | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-09T16:02:50Z | - |
dc.date.available | 2013-03-09T16:02:50Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.31, no.3, pp.228 - 230 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/96811 | - |
dc.description.abstract | A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | POLY-SI | - |
dc.subject | INTEGRATION | - |
dc.subject | TRANSISTORS | - |
dc.subject | TECHNOLOGY | - |
dc.subject | FILMS | - |
dc.title | High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain | - |
dc.type | Article | - |
dc.identifier.wosid | 000274995300017 | - |
dc.identifier.scopusid | 2-s2.0-77649187284 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 228 | - |
dc.citation.endingpage | 230 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2009.2038348 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Jang, Moon-Gyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Dopant-segregated Schottky barrier (DSSB) | - |
dc.subject.keywordAuthor | dopant segregation (DS) | - |
dc.subject.keywordAuthor | high performance | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | Ni silicide | - |
dc.subject.keywordAuthor | Schottky barrier (SB) | - |
dc.subject.keywordAuthor | thin body | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.subject.keywordPlus | POLY-SI | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | FILMS | - |
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