A Narrow-Linewidth On-Chip Toroid Raman Laser

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In this paper, we report a narrow-linewidth on-chip toroid Raman laser. Under free-running condition, we have obtained the minimum fundamental linewidth of 3 Hz and the maximum unidirectional output power of 223 mu W. Lasing under the same condition in continuous-wave mode over 90 min is achieved at an average power level of 21 mu W and a standard deviation of 0.17 mu W. We further derived the frequency noise spectrum and identified an enhancement of frequency noise due to Kerr non-linearity. In addition, we have observed the shifting of relaxation oscillation frequency as a consequence of weak mode splitting.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2011-03
Language
English
Article Type
Article
Keywords

SEMICONDUCTOR-LASERS; SEMICLASSICAL THEORY; FIBER LASER; NOISE; SCATTERING; MICROCAVITY

Citation

IEEE JOURNAL OF QUANTUM ELECTRONICS, v.47, no.3, pp.320 - 326

ISSN
0018-9197
DOI
10.1109/JQE.2010.2087742
URI
http://hdl.handle.net/10203/96346
Appears in Collection
ME-Journal Papers(저널논문)
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