Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells

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dc.contributor.authorFang, Liangko
dc.contributor.authorBaik, Seung-Jaeko
dc.contributor.authorLim, Koeng-Suko
dc.contributor.authorYoo, Seung-Hyupko
dc.contributor.authorSeo, Myung-Sooko
dc.contributor.authorKang, Sang-Jungko
dc.contributor.authorSeo, Jung-Wonko
dc.date.accessioned2013-03-08T19:59:27Z-
dc.date.available2013-03-08T19:59:27Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-05-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.96, no.19, pp.193501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/94125-
dc.description.abstractA thermally evaporated p-type amorphous tungsten oxide (p-a-WO3) film was introduced as a buffer layer between SnO2 and p-type amorphous silicon carbide (p-a-SiC) of pin-type amorphous silicon based solar cells. Using the Schottky barrier model, it is shown that the p-a-WO3 layer lowered the Schottky barrier height, which enhanced the open circuit voltage and the blue response compared to a bufferless cell. By inserting a 2-nm-thick p-a-WO3 layer between SnO2 and an 8-nm-thick p-a-SiC layer, the conversion efficiency was increased by 7.3% compared to the optimized bufferless cell only with a 10-nm-thick p-a-SiC window layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427396]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectFILMS-
dc.titleTungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells-
dc.typeArticle-
dc.identifier.wosid000277756400076-
dc.identifier.scopusid2-s2.0-77953014801-
dc.type.rimsART-
dc.citation.volume96-
dc.citation.issue19-
dc.citation.beginningpage193501-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.3427396-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLim, Koeng-Su-
dc.contributor.localauthorYoo, Seung-Hyup-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoramorphous semiconductors-
dc.subject.keywordAuthorbuffer layers-
dc.subject.keywordAuthorelemental semiconductors-
dc.subject.keywordAuthorSchottky diodes-
dc.subject.keywordAuthorsilicon-
dc.subject.keywordAuthorsilicon compounds-
dc.subject.keywordAuthorsolar cells-
dc.subject.keywordAuthortin compounds-
dc.subject.keywordAuthortungsten compounds-
dc.subject.keywordAuthorwide band gap semiconductors-
dc.subject.keywordPlusFILMS-
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