A crack model for the onset of blisters using finite surface thicknesses

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dc.contributor.authorHong, Jung-Wukko
dc.contributor.authorCheong, Soonwukko
dc.date.accessioned2013-03-08T13:20:18Z-
dc.date.available2013-03-08T13:20:18Z-
dc.date.created2012-07-04-
dc.date.created2012-07-04-
dc.date.issued2006-11-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.100, no.9-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/93109-
dc.description.abstractIn this paper, hydrogen-induced delamination of a bulk material with a finite thickness is investigated. Hydrogen implanted interface splitting is considered as the growth of the crack by forming blisters. The radius of a blister depends on the amount of the implanted hydrogen, crack surface energy, and annealing temperature. For a finite thickness of the superstrate, the evolution of the blisters is calculated adopting a smooth bell-shape function and applying the Rayleigh-Ritz method [K. K. Raju and E. V. Rao, J. Eng. Mech. 119, 626 (1993)]. The required minimum implanted gas N-min is calculated accordingly. The calculated N-min value is compared with an experimental result in literature.(c) 2006 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectSILICON-ON-INSULATOR-
dc.subjectLAYER-
dc.subjectIMPLANTATION-
dc.subjectTECHNOLOGY-
dc.subjectADHESION-
dc.subjectWAFERS-
dc.titleA crack model for the onset of blisters using finite surface thicknesses-
dc.typeArticle-
dc.identifier.wosid000242041500100-
dc.identifier.scopusid2-s2.0-33751075182-
dc.type.rimsART-
dc.citation.volume100-
dc.citation.issue9-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.2364040-
dc.contributor.localauthorHong, Jung-Wuk-
dc.contributor.nonIdAuthorCheong, Soonwuk-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSILICON-ON-INSULATOR-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusIMPLANTATION-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusADHESION-
dc.subject.keywordPlusWAFERS-
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