DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Jung-Wuk | ko |
dc.contributor.author | Cheong, Soonwuk | ko |
dc.date.accessioned | 2013-03-08T13:20:18Z | - |
dc.date.available | 2013-03-08T13:20:18Z | - |
dc.date.created | 2012-07-04 | - |
dc.date.created | 2012-07-04 | - |
dc.date.issued | 2006-11 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.100, no.9 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/93109 | - |
dc.description.abstract | In this paper, hydrogen-induced delamination of a bulk material with a finite thickness is investigated. Hydrogen implanted interface splitting is considered as the growth of the crack by forming blisters. The radius of a blister depends on the amount of the implanted hydrogen, crack surface energy, and annealing temperature. For a finite thickness of the superstrate, the evolution of the blisters is calculated adopting a smooth bell-shape function and applying the Rayleigh-Ritz method [K. K. Raju and E. V. Rao, J. Eng. Mech. 119, 626 (1993)]. The required minimum implanted gas N-min is calculated accordingly. The calculated N-min value is compared with an experimental result in literature.(c) 2006 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SILICON-ON-INSULATOR | - |
dc.subject | LAYER | - |
dc.subject | IMPLANTATION | - |
dc.subject | TECHNOLOGY | - |
dc.subject | ADHESION | - |
dc.subject | WAFERS | - |
dc.title | A crack model for the onset of blisters using finite surface thicknesses | - |
dc.type | Article | - |
dc.identifier.wosid | 000242041500100 | - |
dc.identifier.scopusid | 2-s2.0-33751075182 | - |
dc.type.rims | ART | - |
dc.citation.volume | 100 | - |
dc.citation.issue | 9 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.2364040 | - |
dc.contributor.localauthor | Hong, Jung-Wuk | - |
dc.contributor.nonIdAuthor | Cheong, Soonwuk | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILICON-ON-INSULATOR | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | IMPLANTATION | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | ADHESION | - |
dc.subject.keywordPlus | WAFERS | - |
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