Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study

Abstract

Growth mode and structural properties of GaSb layers grown on silicon substrate by molecular beam epitaxy method are investigated by transmission electron microscopy. It is found that the GaSb grows to three-dimensional islands and grains are tilted to reduce a lattice mismatch through twin boundaries when they are directly grown on Si substrate. A low-temperature (LT) AlSb buffer plays a key role in transferring the growth mode from a three-dimensional island to a layer-by-layer structure. When the LT AlSb layer is used as a buffer, 90 degrees misfit dislocations, with the Burgers vector b of 1/2a < 110 >, are observed on the interface.