Zinc (Zn) nanodots on thermally grown silicon oxide have been fabricated at low temperature using the photo metal-organic chemical vapor deposition (photo-MOCVD) technique. Metal nanodots for memory application by MOCVD method is suggested for the first time. Even at the low temperature of 150 degrees C, Zn nanodots are successfully deposited by this method. By changing the carrier gas (argon) and the chamber pressure, the shape and size of Zn nanodots, which are presented by scanning electron microscopy (SEM), are systematically investigated in a controlled way. In order to apply these Zn nanodots to a Flash-type nonvolatile memory (NVM), the capacitance-voltage (CV) characteristics of Zn nanodots are also shown in this paper.