DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong-A | ko |
dc.contributor.author | Seo, Young Ho | ko |
dc.contributor.author | Cho, Young-Ho | ko |
dc.contributor.author | Kim, Geunho | ko |
dc.contributor.author | Bu, Jong-Uk | ko |
dc.date.accessioned | 2013-03-08T03:02:39Z | - |
dc.date.available | 2013-03-08T03:02:39Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | SENSORS AND MATERIALS, v.18, no.4, pp.199 - 213 | - |
dc.identifier.issn | 0914-4935 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91929 | - |
dc.description.abstract | In this paper, we present a hermetic MEMS package bonded by a closed-loop 8OAu20Sn solder line. We designed three different test specimens including a substrate-heated specimen without an interconnection line (SHX), a substrate-heated specimen with an interconnection line (SHI), and a locally heated specimen with an interconnection line (LHI). A pressurized helium leak test was carried out to evaluate the hermetic seal along a critical pressure test to measure bonding strength. In the bonding process, the substrate heating methods (SHX, SHI) require 400 degrees C and 40 min, while the local heating method (LHI) requires a heater power of 6.76 W for 4 min. In the hermeticity test, SHX, SHI, and LHI show leak rates of 8.4 +/- 6.7x10(-10) mbar-l/s, 13.5 9.8x10(-10) mbar-l/s, and 18.8 +/- 9.9x10(-10) mbar-l/s, respectively, for the same internal volume of 6.89 +/- 0.2x10(-6) l. In the critical pressure test, no fracture was found in the bonded specimens at an applied pressure of 1 +/- 0.1 MPa. From these results, we determine an approximate bonding strength of the test specimen as 3.53 +/- 0.07 MPa. We have experimentally verified that LHI shows the potential of hermetic MEMS packaging with an interconnection line and a bonding process for mass production that requires little time. | - |
dc.language | English | - |
dc.publisher | MYU K K | - |
dc.subject | SILICON | - |
dc.title | Fabrication and characterization of a low-temperature hermetic MEMS package bonded by a closed-loop AuSn solder line | - |
dc.type | Article | - |
dc.identifier.wosid | 000241488900003 | - |
dc.identifier.scopusid | 2-s2.0-33749658185 | - |
dc.type.rims | ART | - |
dc.citation.volume | 18 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 199 | - |
dc.citation.endingpage | 213 | - |
dc.citation.publicationname | SENSORS AND MATERIALS | - |
dc.contributor.localauthor | Cho, Young-Ho | - |
dc.contributor.nonIdAuthor | Kim, Seong-A | - |
dc.contributor.nonIdAuthor | Seo, Young Ho | - |
dc.contributor.nonIdAuthor | Kim, Geunho | - |
dc.contributor.nonIdAuthor | Bu, Jong-Uk | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | hermetic MEMS packaging | - |
dc.subject.keywordAuthor | low-temperature bonding | - |
dc.subject.keywordAuthor | solder-line bonding | - |
dc.subject.keywordAuthor | pressurized hermeticity test | - |
dc.subject.keywordPlus | SILICON | - |
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