A simple model parameter extraction methodology for an on-chip spiral inductor

Abstract

In this letter, a simple model parameter extraction methodology for an on-chip spiral inductor is proposed based on a wide-band, inductor model that incorporates parallel inductance and resistance to model skin and proximity elects, and capacitance to model the decrease in series resistance above the frequency near the peak quality factor The wide-band inductor model does not require any fequency dependent elements, and model parameters call be extracted directly from the measured data with some curve fitting. The validity of the proposed model and parameter extraction methodology are verified with various size inductors fabricated using 0.18 mu m CMOS technology.