운모 기판을 플렉시블 다결정 실리콘 박막 트랜지스터에적용하기 위한 버퍼층 형성 연구Formation of a Buffer Layer on Mica Substrate for Application toFlexible Thin Film Transistors

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Polycrystalline silicon (poly-Si) thin film transistors (TFTs) might be fabricated on the mica substrate and transferred to a flexible plastic substrate because mica can be easily cleaved into a thin layer. To overcome the adhesion and stress problem between poly-Si film and mica substrate, a buffer layer consisting of three layers has been developed. The layer is for electrical isolation, the Ti layer is for adhesion of and mica. and Ta is for stress relief between and Ti. A TFT was fabricated on the mica substrate by a conventional Si process and was successfully transferred to a plastic substrate.
Publisher
한국재료학회
Issue Date
2007-02
Language
KOR
Citation

한국재료학회지, v.17, no.2, pp.115 - 120

ISSN
1225-0562
URI
http://hdl.handle.net/10203/91179
Appears in Collection
MS-Journal Papers(저널논문)
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