Integration of single-crystal LiNbO3 thin film on silicon by laser irradiation and ion implantation-induced layer transfer

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integration of high-quality ferroelectric thin films, e.g., LiNbO3, in planar device architectures on silicon substrates remains a technological challenge. The successful fabrication of a suspended micro-disk resonator structure (see figure) suggests that the method reported here -a combination of wafer bonding, ion implantation, and layer transfer induced by laser irradiation-may be useful in optoelectronic device applications.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2006-06
Language
English
Article Type
Article
Keywords

LITHIUM-NIOBATE; LIFTOFF

Citation

ADVANCED MATERIALS, v.18, no.12, pp.1533 - 1533

ISSN
0935-9648
DOI
10.1002/adma.200502364
URI
http://hdl.handle.net/10203/91092
Appears in Collection
ME-Journal Papers(저널논문)
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