Integration of single-crystal LiNbO3 thin film on silicon by laser irradiation and ion implantation-induced layer transfer

Abstract

integration of high-quality ferroelectric thin films, e.g., LiNbO3, in planar device architectures on silicon substrates remains a technological challenge. The successful fabrication of a suspended micro-disk resonator structure (see figure) suggests that the method reported here -a combination of wafer bonding, ion implantation, and layer transfer induced by laser irradiation-may be useful in optoelectronic device applications.