Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers

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This letter presents a reliable and very easy method for selective growth of polarity controlled ZnO films on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy. Cr-compound intermediate layers are used to control the crystal polarity of ZnO films on (0001) Al2O3. ZnO films grown on rocksalt structure CrN/(0001) Al2O3 shows Zn polarity, while those grown on rhombohedral Cr2O3/(0001) Al2O3 shows O polarity. Possible interface atomic arrangements for both heterostructures are proposed. (C) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-05
Language
English
Article Type
Article
Keywords

MOLECULAR-BEAM EPITAXY; GAN; SAPPHIRE; CRYSTALS; GROWTH

Citation

APPLIED PHYSICS LETTERS, v.90, no.20, pp.173 - 190

ISSN
0003-6951
DOI
10.1063/1.2740190
URI
http://hdl.handle.net/10203/90188
Appears in Collection
MS-Journal Papers(저널논문)
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