20 Gbps operation of RTD/HBT MOBILE (MOnostable BIstable Logic Element) IC based on an InP technology

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dc.contributor.authorChoi, Sko
dc.contributor.authorLee, Bko
dc.contributor.authorKim, Tko
dc.contributor.authorYang, Kyounghoonko
dc.date.accessioned2013-03-07T09:41:41Z-
dc.date.available2013-03-07T09:41:41Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-
dc.identifier.citationCOMPOUND SEMICONDUCTORS 2004, PROCEEDINGS BOOK SERIES: INSTITUTE OF PHYSICS CONFERENCE SERIES, v.184, pp.209 - 212-
dc.identifier.issn0951-3248-
dc.identifier.urihttp://hdl.handle.net/10203/89895-
dc.description.abstractA new CML-type monostable/bistable logic element IC is fabricated using inonolithically integrated resonant tunnelling diodes (RTDs) and InP/InGaAs Heterojunction Bipolar Transistors (HBTs). The D flip-flop function of the fabricated circuit is confirmed up to 20 Gbps at room temperature. This result indicates the potential of the RTD/HBT technology for high-speed logic applications.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.title20 Gbps operation of RTD/HBT MOBILE (MOnostable BIstable Logic Element) IC based on an InP technology-
dc.typeArticle-
dc.identifier.wosid000229928100044-
dc.identifier.scopusid2-s2.0-33644531263-
dc.type.rimsART-
dc.citation.volume184-
dc.citation.beginningpage209-
dc.citation.endingpage212-
dc.citation.publicationnameCOMPOUND SEMICONDUCTORS 2004, PROCEEDINGS BOOK SERIES: INSTITUTE OF PHYSICS CONFERENCE SERIES-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorChoi, S-
dc.contributor.nonIdAuthorLee, B-
dc.contributor.nonIdAuthorKim, T-
dc.type.journalArticleArticle; Proceedings Paper-
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