Improved Electrical Characteristics of Amorphous Oxide TFTs Based on TiOx Channel Layer Grown by Low-Temperature MOCVD

Abstract

We report on the fabrication of n-type thin-film transistors (TFTs) based on TiOx channels grown by the metal-organic chemical vapor deposition method with the chamber temperature of 250 degrees C. These TFTs exhibit ideal characteristics with the flat saturation, low subthreshold swing, and narrow hysteresis window, all of which are a clear improvement from our previous work based on TiO2 nanoparticles. The TiOx film in this letter is identified to be in the amorphous phase from X-ray diffraction analysis, and its carrier density is estimated to be 2.6 x 10(17) cm(-3) from the transmission line model and analysis of TFT on-resistance measured at various gate biases and channel lengths.