DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bang, Junhyeok | ko |
dc.contributor.author | Kim, Hanchul | ko |
dc.contributor.author | Kang, Joongoo | ko |
dc.contributor.author | Lee, Woo-Jin | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-07T04:40:02Z | - |
dc.date.available | 2013-03-07T04:40:02Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-12 | - |
dc.identifier.citation | PHYSICA B-CONDENSED MATTER, v.401, pp.196 - 199 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/89414 | - |
dc.description.abstract | We investigate the effect of Ge on the retardation of B diffusion in SiGe alloys through first-principle calculations, and find that the Ge bonding effect is most significant in the nearest-neighborhood of B. The B dopant diffuses from a self-interstitial-B pair via an interstitialcy mechanism for neutral charge state, while a kick-out mechanism is also possible for 1 + charge state. The migration and activation energies depend on the number and positions of the Ge atoms and are generally enhanced by the presence of Ge, reducing the B diffusivity. (C) 2007 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | TRANSIENT ENHANCED DIFFUSION | - |
dc.subject | SILICON | - |
dc.subject | SI1-XGEX | - |
dc.title | Retardation of boron diffusion in SiGe alloy | - |
dc.type | Article | - |
dc.identifier.wosid | 000252041000046 | - |
dc.identifier.scopusid | 2-s2.0-36049006196 | - |
dc.type.rims | ART | - |
dc.citation.volume | 401 | - |
dc.citation.beginningpage | 196 | - |
dc.citation.endingpage | 199 | - |
dc.citation.publicationname | PHYSICA B-CONDENSED MATTER | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Bang, Junhyeok | - |
dc.contributor.nonIdAuthor | Kim, Hanchul | - |
dc.contributor.nonIdAuthor | Kang, Joongoo | - |
dc.contributor.nonIdAuthor | Lee, Woo-Jin | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | dopants | - |
dc.subject.keywordAuthor | boron diffusion | - |
dc.subject.keywordAuthor | SiGe alloy | - |
dc.subject.keywordAuthor | first-principle calculations | - |
dc.subject.keywordPlus | TRANSIENT ENHANCED DIFFUSION | - |
dc.subject.keywordPlus | AB-INITIO | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SI1-XGEX | - |
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