Strength design and minimization of residual stresses in reversible GaAs wafer bonding process

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dc.contributor.authorChoi, STko
dc.contributor.authorSong, JYko
dc.contributor.authorKim, JHko
dc.contributor.authorLee, Sko
dc.contributor.authorEarmme, Youn-Youngko
dc.identifier.citationKEY ENGINEERING MATERIALS, v.306-308, pp.1337 - 1342-
dc.description.abstractThe GaAs wafer bonding process is investigated to reduce the mechanical failures of GaAs wafer based on strength design concept. Three-point bending experiment is performed to measure the fracture strength of GaAs wafer, of which cleavage takes place on (110) plane. We propose a simple method for minimizing the thermal residual stress in a three-layer structure, of which the basic idea is to use an appropriate steady-state temperature gradient to the wafer bonding process. The optimum bonding condition of GaAs/wax/sapphire structure is determined based on the proposed method. The effect of material anisotropy on the thermal residual stress is also analyzed by finite element method.-
dc.publisherTrans Tech Publications Ltd.-
dc.titleStrength design and minimization of residual stresses in reversible GaAs wafer bonding process-
dc.citation.publicationnameKEY ENGINEERING MATERIALS-
dc.contributor.localauthorEarmme, Youn-Young-
dc.contributor.nonIdAuthorChoi, ST-
dc.contributor.nonIdAuthorSong, JY-
dc.contributor.nonIdAuthorKim, JH-
dc.contributor.nonIdAuthorLee, S-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorreversible wafer bonding process-
dc.subject.keywordAuthorfracture strength-
dc.subject.keywordAuthorthermal residual stress-
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ME-Journal Papers(저널논문)
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