Formation of ReSi1.75 thin films on si substrates by using Ta getter

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Rhenium thin films have been deposited on a (100) Si wafer by RF magnetron sputtering. Subsequently, the Re thin films have been annealed in the vacuum quartz tube in the temperature range between SOOT and 1200 degrees C. After the heat treatments, SiO2 layers have been detected between Re thin film and Si substrate. To reduce the residual oxygen, the vacuum heat treatments have been done using Ta foil as a getter material in the temperature ranging from 800 degrees C to 1,200 degrees C. Polycrystalline ReSi1.75 thin films have been formed on the Si substrate after the samples annealed above 1,000 degrees C with the Ta foil. When the Ta foil used in heat treatments, the formation Of SiO2 in the interface between Re thin film and Si substrate was prevented, consequently, polycrystalline ReSi1.75 thin films could be formed on Si substrate even in the high vacuum.
Publisher
KOREAN INST METALS MATERIALS
Issue Date
2007-06
Language
English
Article Type
Article
Keywords

SEMICONDUCTING RHENIUM SILICIDE; THERMOELECTRIC PROPERTIES; RESI2; MICROSTRUCTURE; SILICON(111); TRANSPORT

Citation

JOURNAL OF THE KOREAN INSTITUTE OF METALS AND MATERIALS, v.45, no.6, pp.383 - 388

ISSN
1738-8228
URI
http://hdl.handle.net/10203/88697
Appears in Collection
MS-Journal Papers(저널논문)
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