Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor
The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.
- Publisher
- AMERICAN PHYSICAL SOC
- Issue Date
- 2006-05
- Language
- English
- Article Type
- Article
- Keywords
HOT-ELECTRON TRANSPORT; ROOM-TEMPERATURE; MAGNETORESISTANCE; JUNCTIONS; INJECTION; VALVE; FILMS
- Citation
PHYSICAL REVIEW B, v.73, no.17
- ISSN
- 1098-0121
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
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