DSpace at KOASAS
College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

Cited 109 time in webofscience Cited 0 time in scopus
  • Hit : 598
  • Download : 0
Export
DC FieldValueLanguage
dc.contributor.authorTan, YNko
dc.contributor.authorChim, WKko
dc.contributor.authorChoi, WKko
dc.contributor.authorJoo, MSko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2013-03-06T18:08:30Z-
dc.date.available2013-03-06T18:08:30Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-04-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/87894-
dc.description.abstractThe charge storage and progranderase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-kappa charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO2 as well as the good charge-retention time of Al2O3, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO2 and Al2O3 compositions as a blocking-oxide layer in SONOS-type structures is also investigated.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectMOS DEVICE APPLICATIONS-
dc.subjectGATE ELECTRODE-
dc.subjectFLASH MEMORY-
dc.subjectDIELECTRICS-
dc.subjectMETAL-
dc.titleHafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation-
dc.typeArticle-
dc.identifier.wosid000236473500010-
dc.identifier.scopusid2-s2.0-33645733710-
dc.type.rimsART-
dc.citation.volume53-
dc.citation.issue4-
dc.citation.beginningpage654-
dc.citation.endingpage662-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2006.870273-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorTan, YN-
dc.contributor.nonIdAuthorChim, WK-
dc.contributor.nonIdAuthorChoi, WK-
dc.contributor.nonIdAuthorJoo, MS-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorFlash memories-
dc.subject.keywordAuthorhafnium aluminum oxide-
dc.subject.keywordAuthorhafnium oxide-
dc.subject.keywordAuthorhigh dielectric constant (high-kappa)-
dc.subject.keywordAuthorpolysiliconoxide-nitride-oxide-silicon (SONOS)-
dc.subject.keywordPlusMOS DEVICE APPLICATIONS-
dc.subject.keywordPlusGATE ELECTRODE-
dc.subject.keywordPlusFLASH MEMORY-
dc.subject.keywordPlusDIELECTRICS-
dc.subject.keywordPlusMETAL-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 109 items in WoS Click to see citing articles in records_button

Display Simple Item Record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


rss_1.0 rss_2.0 atom_1.0