DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Kwack, KD | ko |
dc.contributor.author | Park, JG | ko |
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Jang, MS | ko |
dc.contributor.author | Park, HL | ko |
dc.date.accessioned | 2013-03-06T04:40:30Z | - |
dc.date.available | 2013-03-06T04:40:30Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-07 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.83, pp.269 - 271 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85827 | - |
dc.description.abstract | Selected-area electron diffraction pattern (SADP) results showed two sets of {1/2 1/2 1/2} superstructure reflections with symmetrical intensities along the [110] axis, and the corresponding high-resolution transmission electron microscopy images indicated a doublet periodicity in the contrast of the {111} lattice planes. Photoluminescence spectra from highly strained CdxZn1-xTe/GaAs heterostructures showed that the valence-band splitting into the heavy hole and the light hole bands occurred as the Cd mole fraction was increased. The valence-band splitting is strongly correlated to the CuPtB-type ordered structure in highly strained heterostructures. (C) 2003 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | LONG-RANGE ORDER | - |
dc.subject | CDTE-FILMS | - |
dc.subject | GAAS | - |
dc.subject | CDZNTE | - |
dc.subject | GROWTH | - |
dc.subject | (111)B | - |
dc.title | Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers | - |
dc.type | Article | - |
dc.identifier.wosid | 000184038900022 | - |
dc.identifier.scopusid | 2-s2.0-0042769352 | - |
dc.type.rims | ART | - |
dc.citation.volume | 83 | - |
dc.citation.beginningpage | 269 | - |
dc.citation.endingpage | 271 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1592622 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Kwack, KD | - |
dc.contributor.nonIdAuthor | Park, JG | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.contributor.nonIdAuthor | Jang, MS | - |
dc.contributor.nonIdAuthor | Park, HL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | LONG-RANGE ORDER | - |
dc.subject.keywordPlus | CDTE-FILMS | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | CDZNTE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | (111)B | - |
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