Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers

Abstract

Selected-area electron diffraction pattern (SADP) results showed two sets of {1/2 1/2 1/2} superstructure reflections with symmetrical intensities along the [110] axis, and the corresponding high-resolution transmission electron microscopy images indicated a doublet periodicity in the contrast of the {111} lattice planes. Photoluminescence spectra from highly strained CdxZn1-xTe/GaAs heterostructures showed that the valence-band splitting into the heavy hole and the light hole bands occurred as the Cd mole fraction was increased. The valence-band splitting is strongly correlated to the CuPtB-type ordered structure in highly strained heterostructures. (C) 2003 American Institute of Physics.