DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SS | ko |
dc.contributor.author | Choi, EK | ko |
dc.contributor.author | Kim, HJ | ko |
dc.contributor.author | Park, MH | ko |
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Kim, WJ | ko |
dc.contributor.author | Bae, JC | ko |
dc.contributor.author | Song, TK | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.date.accessioned | 2013-03-06T03:57:47Z | - |
dc.date.available | 2013-03-06T03:57:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-07 | - |
dc.identifier.citation | JOURNAL OF ELECTROCERAMICS, v.13, pp.83 - 88 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85738 | - |
dc.description.abstract | Ferroelectric properties of samarium substituted Bi4Ti3O12 films, Bi3.15Sm0.85Ti3O12 (BST), were evaluated for use as lead-free thin film ferroelectrics for FeRAM applications. The BST films were fabricated on the Pt/Ti/SiO2/Si(100) substrates by a metalorganic solution deposition method. The measured XRD patterns revealed that the BST films showed only a Bi4Ti3O12-type phase with a random orientation. The BST film capacitors showed excellent ferroelectric properties. For the film capacitor annealed at 700degreesC, 2P(r) of 64.2 muC/cm(2) and 2E(c) of 101.7 kV/cm at applied electric field of 150 kV/cm were observed. The capacitor did not show any significant fatigue up to 1.5 x 10(8) read/write switching cycles at a frequency of 1 MHz, which suggests that the samarium should be considered for a promising lanthanide elements to make a good thin ferroelectric film for memory applications. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | BISMUTH TITANATE | - |
dc.subject | FATIGUE | - |
dc.subject | DECOMPOSITION | - |
dc.subject | CAPACITORS | - |
dc.title | Ferroelectric properties of (Bi, SM)(4)Ti3O12 (BST) thin films fabricated by a metalorganic solution deposition method | - |
dc.type | Article | - |
dc.identifier.wosid | 000226236100013 | - |
dc.identifier.scopusid | 2-s2.0-20144389583 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.beginningpage | 83 | - |
dc.citation.endingpage | 88 | - |
dc.citation.publicationname | JOURNAL OF ELECTROCERAMICS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, SS | - |
dc.contributor.nonIdAuthor | Choi, EK | - |
dc.contributor.nonIdAuthor | Kim, HJ | - |
dc.contributor.nonIdAuthor | Park, MH | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.contributor.nonIdAuthor | Kim, WJ | - |
dc.contributor.nonIdAuthor | Bae, JC | - |
dc.contributor.nonIdAuthor | Song, TK | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | Bi3.15Sm0.85Ti3O12 | - |
dc.subject.keywordAuthor | Bi4Ti3O12 | - |
dc.subject.keywordAuthor | thin film | - |
dc.subject.keywordAuthor | remanent polarization | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | BISMUTH TITANATE | - |
dc.subject.keywordPlus | FATIGUE | - |
dc.subject.keywordPlus | DECOMPOSITION | - |
dc.subject.keywordPlus | CAPACITORS | - |
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