DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, EC | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-04T21:50:26Z | - |
dc.date.available | 2013-03-04T21:50:26Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-12 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.66, pp.233205 - 233205 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10203/84284 | - |
dc.description.abstract | Based on first-principles theoretical calculations, we find a very stable nitrogen complex in oxynitrides, which consists of two N atoms at O sites and one O vacancy. This N complex is electrically inactive without bonding with hydrogen, removing the electrical activity of O vacancies, and the stability of this complex is greatly enhanced as going from pure oxide to oxynitride films. We suggest that charge traps involving a single N atom, such as a bridging N center, can be deactivated by reactions with O or NO interstitials, and resulting N interstitials are easily depleted into the interface, in good agreement with experiments. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.subject | ELECTRONIC-STRUCTURE CALCULATIONS | - |
dc.subject | CHARGE-TRAPPING PROPERTIES | - |
dc.subject | NITRIDED SILICON DIOXIDE | - |
dc.subject | MULTIGRID METHOD | - |
dc.subject | BORON-DIFFUSION | - |
dc.subject | ATOMIC OXYGEN | - |
dc.subject | N2O | - |
dc.subject | INTERFACE | - |
dc.subject | OXIDE | - |
dc.subject | DEFECTS | - |
dc.title | Electrically inactive nitrogen complex in Si oxynitride | - |
dc.type | Article | - |
dc.identifier.wosid | 000180279400012 | - |
dc.identifier.scopusid | 2-s2.0-0037116086 | - |
dc.type.rims | ART | - |
dc.citation.volume | 66 | - |
dc.citation.beginningpage | 233205 | - |
dc.citation.endingpage | 233205 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.identifier.doi | 10.1103/PhysRevB.66.233205 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Lee, EC | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE CALCULATIONS | - |
dc.subject.keywordPlus | CHARGE-TRAPPING PROPERTIES | - |
dc.subject.keywordPlus | NITRIDED SILICON DIOXIDE | - |
dc.subject.keywordPlus | MULTIGRID METHOD | - |
dc.subject.keywordPlus | BORON-DIFFUSION | - |
dc.subject.keywordPlus | ATOMIC OXYGEN | - |
dc.subject.keywordPlus | N2O | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | DEFECTS | - |
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