운모기판을 이용한 다결정 Si 전이막 성장 연구Growth of Transferable Polycrystalline Si Film on Mica Substrate

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We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating on the amorphous Si film and annealing at for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.
Publisher
한국재료학회
Issue Date
2004-05
Language
Korean
Citation

한국재료학회지, v.14, no.5, pp.343 - 347

ISSN
1225-0562
URI
http://hdl.handle.net/10203/83681
Appears in Collection
MS-Journal Papers(저널논문)
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