반응성 CVD를 이용한 다결정 실리콘 기판에서의 CoSi2 layer의 성장거동과 열적 안정성에 관한 연구

Abstract

Uniform polycrystalline layers have been grown in situ on a polycrystalline Si substrate at temperature near by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η -C H )(CO). The growth behavior and thermal stability of layer grown on polycrystalline Si substrates were investigated. The plate-like CoSiwas initially formed with either (111), (220) or (311) interface on polycrystalline Si substrate. As deposition time was increasing, a uniform epitaxial layer was grown from the discrete plate, where the orientation of thelayer is same as the orientation of polycrystalline Si grain. The interface between layer and polycrystalline Si substrate was always (111) coherent. The growth of the uniform layer had a parabolic relationship with the deposition time. Therefore we confirmed that the growth of layer was controlled by diffusion of cobalt. The thermal stability of layer on small grain-sized polycrystalline Si substrate has been investigated using sheet resistance measurement at temperature from to . The layer was degraded at . Inserting a TiN interlayer between polycrystalline Si and layers improved the thermal stability of layer up to due to the suppression of the Co diffusion.