DC Field | Value | Language |
---|---|---|
dc.contributor.author | sungil chang | ko |
dc.contributor.author | hyungcheol shin | ko |
dc.contributor.author | jongho lee | ko |
dc.date.accessioned | 2013-03-04T11:13:49Z | - |
dc.date.available | 2013-03-04T11:13:49Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-12 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.932 - 936 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82462 | - |
dc.description.abstract | In this research, the off-state leakage current characteristics were studied for different device structures having a high-kappa. dielectric as a gate dielectric and/or a spacer. A guideline to reduce the off-state leakage current is given in terms of the gate dielectric and the spacer structures. Several structures were compared in terms of dielectric constant, equivalent oxide thickness (EOT), and drain-induced barrier lowering (DIBL). The E-field contour, which is responsible for the gate-induced drain leakage (GIDL), was shown. The device structure in which the high-kappa dielectric extends to the bottom of the oxide spacers showed the smallest GIDL current while the device structure in which the interface between the high-kappa gate dielectric and the oxide spacer met at the lightly-doped drain (LDD) region of the silicon substrate showed the best DIBL characteristics. Also, the device structure having a gate dielectric stack of high-kappa gate dielectric/buffer SiO2 spacer was shown to be reasonable for suppressing the GIDL. As the EOT became thinner because of using a high-kappa. dielectric, the off-state leakage current, which was affected by the GIDL current, becomes severe. | - |
dc.language | Korean | - |
dc.publisher | Korean Physical Soc | - |
dc.title | Off-state Leakage Currents of MOSFETs with High-k Dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000179871300021 | - |
dc.identifier.scopusid | 2-s2.0-0036955652 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 932 | - |
dc.citation.endingpage | 936 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | hyungcheol shin | - |
dc.contributor.nonIdAuthor | sungil chang | - |
dc.contributor.nonIdAuthor | jongho lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | GIDL | - |
dc.subject.keywordAuthor | DIBL | - |
dc.subject.keywordAuthor | high-kappa dielectric | - |
dc.subject.keywordAuthor | EOT (equivalent oxide thickness) | - |
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