Frequency and voltage dependent dielectric properties of Ni-doped Ba0.6Sr0.4TiO3 thin films

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Highly (100) preferred undoped and 1-5% Ni-doped Ba1-xSrxTiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750degreesC using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol % Ni doped BST film is an effective candidate for high performance tunable device applications.
Publisher
SPRINGER
Issue Date
2004-07
Language
English
Article Type
Article; Proceedings Paper
Keywords

METALLIZATION

Citation

JOURNAL OF ELECTROCERAMICS, v.13, pp.239 - 243

ISSN
1385-3449
URI
http://hdl.handle.net/10203/82155
Appears in Collection
MS-Journal Papers(저널논문)
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