DC Field | Value | Language |
---|---|---|
dc.contributor.author | ilgweon kim | ko |
dc.contributor.author | sangyeon han | ko |
dc.contributor.author | kwangseok han | ko |
dc.contributor.author | jongho lee | ko |
dc.contributor.author | hyungcheol shin | ko |
dc.date.accessioned | 2013-03-03T22:53:06Z | - |
dc.date.available | 2013-03-03T22:53:06Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.2A, pp.447 - 451 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/80806 | - |
dc.description.abstract | A metal oxide semiconductor (MOS) memory based on Si nanocrystals has been fabricated. We have developed a repeatable process for forming uniform, small and high-density Si nanocrystals by low pressure chemical vapor deposition (LPCVD). Spherical nanocrystals with a 4.5 nm average diameter and a density of 5 x 10(11/)cm(2) were obtained. A single transistor memory-cell structure, with a change in threshold voltage of about 0.48 V, corresponding to single electron storage in individual nanocrystals and having the capability of long-term charge storage is fabricated and characterized. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of Delta V-GS approximate to 1.7 V, corresponding to single and multiple electron storage is reported. These finding prove the feasibility of a practical nanocrystal memory with potential for significantly high density, low power, and fast reading properties. | - |
dc.language | English | - |
dc.publisher | Japan Soc Applied Physics | - |
dc.subject | QUANTUM-DOT | - |
dc.title | Si Nano-Crystal Memory Cell with Room Temperature Single Electron Effects | - |
dc.type | Article | - |
dc.identifier.wosid | 000168355600001 | - |
dc.identifier.scopusid | 2-s2.0-0035246552 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 2A | - |
dc.citation.beginningpage | 447 | - |
dc.citation.endingpage | 451 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | hyungcheol shin | - |
dc.contributor.nonIdAuthor | ilgweon kim | - |
dc.contributor.nonIdAuthor | sangyeon han | - |
dc.contributor.nonIdAuthor | kwangseok han | - |
dc.contributor.nonIdAuthor | jongho lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | quantum dots | - |
dc.subject.keywordAuthor | single electron effect | - |
dc.subject.keywordAuthor | Coulomb blockade effect | - |
dc.subject.keywordAuthor | nanocrystal memory | - |
dc.subject.keywordAuthor | direct tunneling | - |
dc.subject.keywordPlus | QUANTUM-DOT | - |
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